MMST3906 [BL Galaxy Electrical]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | MMST3906 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST3906
FEATURES
Pb
Lead-free
z
z
z
z
Power dissipation.(PC=150mW)
Epitaxial planar die construction.
Complementary to MMST3904.
Also available in lead free version.
APPLICATIONS
z
General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
K5N
Package Code
SOT-323
MMST3906
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
-40
-5
V
V
Collector Current -Continuous
Collector Dissipation
-200
150
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST3906
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=-10μA,IE=0
IC=-1mA,IB=0
IE=-10μA,IC=0
VCB=-30V,IE=0
VEB=-5V,IC=0
MIN
-40
-40
-5
TYP MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
-0.05
-0.05
μA
μA
Emitter cut-off current
IEBO
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-20V,IC= -10mA,
f=100MHz
60
80
100
60
30
DC current gain
hFE
300
-0.25
-0.4
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector input capacitance
Noise figure
VCE(sat)
V
-0.65
250
-0.85
-0.95
VBE(sat)
V
fT
MHz
pF
pF
dB
nS
nS
nS
nS
Cobo
Ciob
NF
td
VCB=-5V,IE=0,f=1MHz
VCB=-5V,IE=0,f=1MHz
4.5
10
4
VCE=-5V,IC=-0.1mA,
f=1KHz,Rs=1KΩ
Delay time
35
35
225
75
VCC=-3V,VBE=-0.5V,
IC=-10mA,IB1=-1mA
Rise time
tr
Storage time
ts
VCC=-3V,IC=-10mA,
IB1=IB2=-1mA
Fall time
tf
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST3906
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST3906
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
A
Min
1.8
Max
2.2
B
1.15
1.35
C
D
E
1.0Typical
0.15
0.25
1.2
0.35
0.40
1.4
G
H
J
0.02
0.1
0.1Typical
K
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
MMST3906
SOT-323
3000/Tape&Reel
Document number: BL/SSSTF052
Rev.A
www.galaxycn.com
4
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